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AGM12N10AP - MOSFET

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AGMSEMI

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AGM12N10AP MOSFET by AGMSEMI - Datasheet Preview — Datasheet preview – AGM12N10AP

Datasheet Details

Part number	AGM12N10AP
Manufacturer	AGMSEMI
File Size	1.43 MB
Description	MOSFET
Datasheet	AGM12N10AP Datasheet
Additional preview pages of the AGM12N10AP datasheet.

Product details

Description

The AGM12N10AP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

Features

s BVDSS RDSON ID 100V 9.3mΩ 55A.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching PDFN3.3.
3.3 Pin Configuration.
Low Thermal resistance.
100% Avalanche tested.
100% DVDS tested.

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Published: Dec 28, 2024 |