AGM12N10D Overview
Description
The AGM12N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Product Summary This device is ideal for load switch and battery protection applications.
Key Features
- Advance high cell density Trench technology BVDSS RDSON ID 100V 9.3mΩ 55A
- Low RDS(ON) to minimize conductive loss
- Low Gate Charge for fast switching TO-252 - Low - 100% Avalanche tested
- 100% DVDS tested
