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AGM215TS - MOSFET

Datasheet Summary

Description

package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.
  • ESD.

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Datasheet Details

Part number AGM215TS
Manufacturer AGMSEMI
File Size 920.93 KB
Description MOSFET
Datasheet download datasheet AGM215TS Datasheet
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AGM215TS ● General Description The AGM215TS combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance ■100% Avalanche tested ■100% DVDS tested ■ ESD ● Application ■MB/VGA Vcore ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver Product Summary BVDSS 19.5V RDSON 11mΩ TSSOP8 Pin Configuration ID 7.0A Package Marking and Ordering Information Device Marking Device Device Package AGM215TS AGM215TS TSSOP8 Table 1.
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