AGMSEMI AGM609C
The AGM609C combines advanced trench MOSFET Product Summary technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery BVDSS RDSON ID protection applications.| Part No. | AGM609C |
|---|---|
| Datasheet | AGM609C Download |
| Manufacturer |  AGMSEMI |
| Description | MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
●FEATURES
60V 6.3mΩ 80A● Advance high cell density Trench technology TO-220 Pin Configuration
● Low RDS(ON) to minimize conductive loss
● Low Gate Charge for fast switching
● Low Thermal resistance
● 100% Avalanche tested
● 100% DVDS tested
● Application
● MB/VGA Vcore
● SMPS 2nd Synchronous Rectifier
● POL application
● BLDC Motor driver Package Marking and Ordering Information Device Marking AGM609C Device AGM609C Device Package TO-220 Reel Size ---- Tape width --- Quantity 1000 Table 1.
ABSOLUTE MAXIMUM RATINGS
(TC=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) Drain Current-Continuous(Tc=25℃) (Note 1) Drain Current-Continuous(Tc=100℃) Drain Current-Continuous@ Current-Pulsed (Note 2) PD EAS TJ,TSTG Maximum Power Dissipation(Tc=25℃) Maximum Power Dissipation(Tc=100℃) Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic Value Unit 60 V ±20 V 80 A 48 A 3...
