AGM609S - MOSFET

Description

The AGM609S combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

s BVDSS RDSON ID 60V 7.2mΩ 14A.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching.
Low Thermal resistance.

AGMSEMI

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Datasheet Details

Part number	AGM609S
Manufacturer	AGMSEMI
File Size	449.58 KB
Description	MOSFET
Datasheet	AGM609S Datasheet
Additional preview pages of the AGM609S datasheet.

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Full PDF Text Transcription

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AGM609S ● General Description The AGM609S combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON ID 60V 7.2mΩ 14A ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore SOP8 Pin Configuration DDDD ■ SMPS 2nd Synchronous Rectifier ■ POL application SSS G ■ BLDC Motor driver Package Marking and Ordering Information Device Marking AGM609S Device AGM609S Device Package SOP8 Reel Size 330mm Tape width 12mm Quantity 3000 Table 1.

Published: Dec 28, 2024 |