AGMSEMI AGM609S
The AGM609S combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .| Part No. | AGM609S |
|---|---|
| Datasheet | AGM609S Download |
| Manufacturer |  AGMSEMI |
| Description | MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Product Summary This device is ideal for load switch and battery protection applications.●
FEATURES
BVDSS RDSON ID 60V 7.2mΩ 14A● Advance high cell density Trench technology
● Low RDS(ON) to minimize conductive loss
● Low Gate Charge for fast switching
● Low Thermal resistance
● Application
● MB/VGA Vcore SOP8 Pin Configuration DDDD
● SMPS 2nd Synchronous Rectifier
● POL application SSS G
● BLDC Motor driver Package Marking and Ordering Information Device Marking AGM609S Device AGM609S Device Package SOP8 Reel Size 330mm Tape width 12mm Quantity 3000 Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) Drain Current-Continuous(TA=25℃) (Note 1) Drain Current-Continuous(TA=100℃) Drain Current-Continuous@ Current-Pulsed (Note 2) PD TJ,TSTG Maximum Power Dissipation(TA=25℃) Maximum Power Dissipation(TA=100℃) Operating Junction and Storage Temperature Range Table 2. Thermal Charact...
