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AGM609F - MOSFET

Description

extremely low RDS(ON) .

protection applications.

Features

  • s 60V 6.3mΩ 80A.
  • Advance high cell density Trench technology TO-220F Pin Configuration.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

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Datasheet preview – AGM609F

Datasheet Details

Part number AGM609F
Manufacturer AGMSEMI
File Size 815.33 KB
Description MOSFET
Datasheet download datasheet AGM609F Datasheet
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Full PDF Text Transcription

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AGM609F ● General Description The AGM609F combines advanced trench MOSFET Product Summary technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery BVDSS RDSON ID protection applications. ● Features 60V 6.3mΩ 80A ■ Advance high cell density Trench technology TO-220F Pin Configuration ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ■ 100% Avalanche tested ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking AGM609F Device AGM609F Device Package TO-220F Reel Size ---- Tape width --- Quantity 1000 Table 1.
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