AGMH603H - MOSFET

Description

The AGMH603H combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

s.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching.
Low Thermal resistance.

AGMSEMI

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Datasheet Details

Part number	AGMH603H
Manufacturer	AGMSEMI
File Size	811.43 KB
Description	MOSFET
Datasheet	AGMH603H Datasheet
Additional preview pages of the AGMH603H datasheet.

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Full PDF Text Transcription

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AGMH603H ● General Description The AGMH603H combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS 60V RDSON 2.5mΩ TO-263 Pin Configuration D G S ID 180A Package Marking and Ordering Information Device Marking AGMH603H Device AGMH603H Device Package TO-263 Reel Size 330mm Tape width 25mm Quantity 800 Table 1.

Published: Dec 28, 2024 |