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AGMH606C - MOSFET

Description

to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • Advance high cell density Trench technology TO-220 Pin Configuration.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

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Datasheet Details

Part number AGMH606C
Manufacturer AGMSEMI
File Size 1.18 MB
Description MOSFET
Datasheet download datasheet AGMH606C Datasheet
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Full PDF Text Transcription

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AGMH606C ● General Description The AGMH606C combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. BVDSS RDSON ID 60V 5.3mΩ 80A ● Features ■ Advance high cell density Trench technology TO-220 Pin Configuration ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ■ 100% Avalanche tested ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking Device Device Package AGMH606C AGMH606C TO-220 Reel Size ---- Tape width ---- Quantity 1000 Table 1.
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