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2SA1162 Datasheet PDF

AiT Semiconductor 2SA1162

The 2SA1162 is available in SOT-23 package.
Part No. 2SA1162
Datasheet 2SA1162 Download
Manufacturer
AiT Semiconductor
Description SILICON PNP EPITAXIAL TYPE TRANSISTOR
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2SA1162 datasheet page 1 preview

DESCRIPTION

The 2SA1162 is available in SOT-23 package. ORDERING INFORMATION Package Type Part Number 2SA1162-O SOT-23 2SA1162-Y 2SA1162-G Note SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products FEATURE
● Low Noise: NF=1dB (Typ.),10dB (Max).
● Complementary to 2SC2712.
● Small Package.
● Available in SOT-23 package PIN

DESCRIPTION

HFE CLASSIFICATION Classification O Y G hFE 70~140 120~240 200~400 Pin # 1 2 3

DESCRIPTION

BASE EMITTER COLLECTOR REV1.0 - NOV 2024 RELEASED - -1- AiT Semiconductor Inc. 2SA1162 TRANSISTOR SILICON PNP EPITAXIAL TYPE TRANSISTOR

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise specified VCBO, Collector-Base Voltage -50V VCEO, Collector-Emitter Voltage -50V VEBO, Emitter-Base Voltage -5V IC, Collector Current -Continuous -150mA PC, Collector Power Dissipation 150mW Tj, Junction Temperature 150℃ Tstg, Storage Temperature -55℃ ~ + 125℃ Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the

ELECTRICAL CHARACTERISTICS

are not implied.
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