AiT Semiconductor 2SB1188
The 2SB1188-Q & 2SB1188-R are available in the SOT-89 package. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied.| Part No. | 2SB1188 |
|---|---|
| Datasheet | 2SB1188 Download |
| Manufacturer |  AiT Semiconductor |
| Description | PNP-SILICON GENERAL USE TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
APPLICATIONS
Switching and amplifying in various electrical and electronic circuits. ORDERING INFORMATION FEATURE● Low VCE(sat) VCE(sat)=-0.5V (Typ) (IC/ IB =-2A/-0.2A)
● Epitaxial planar type PIN
DESCRIPTION
Package Type SOT-89 Part Number 2SB1188-Q 2SB1188-R SPQ 3,000pcs/Reel AiT provides all RoHS Compliant Products hFE CLASSIFICATION Rank Q R Range 120 ~ 270 180 ~ 390 SOT-89 PIN# 1 2,4 3DESCRIPTION
Base Collector EmitterABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise specified. VCBO, Collector to Base Voltage -40 V VCEO, Collector to Emitter Voltage -25 V VEBO, Emitter to Base Voltage -6 V IC, Collector Current-Continuous -1.5 A Ptot, Total Power Dissipation (TA = 25°C) TJ, Junction Temperature 1W 150 °C Tstg, Storage Temperature -55 ~ +150 °C Stresses above may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. REV1.0 - JAN 2024 RELEASED - -1- AiT Semiconductor Inc. 2SB1188 TRANSISTOR PNP-SILICON GENERAL USE TRANSISTORELECTRICAL CHARACTERISTICS
TA=25℃ unless otherwise specified.
