AiT Semiconductor RB550V-30
The RB550V-30 is available in SOD-523 package. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied.DESCRIPTION
Silicon epitaxial planar. The RB550V-30 is available in SOD-523 package. ORDERING INFORMATIONFEATURES
● Small surface mounting type● Low VF ,Low IR
● High reliability
● Available in SOD-523 package Package Type Part Number SOD-523 RB550V-30 Note 3,000pcs/Reel AiT provides all RoHS Compliant Products PIN
DESCRIPTION
APPLICATIONS
● General rectification REV1.1 - AUG 2011 RELEASED, SEP 2012 UPDATED - -1- AiT Semiconductor Inc. RB550V-30 SCHOTTKY DIODES SCHOTTKY BARRIER DIODEABSOLUTE MAXIMUM RATINGS
TA = 25°C VRM, Reverse voltage (repetitive peak) 30V VR, Reverse voltage (DC) 30V Io, Average rectified forward current 1A IFSM, Forward current surge peak 3A TJ, Junction temperature 150℃ Tstg, Storage temperature -40℃ ~ +150℃ Stresses above may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.ELECTRICAL CHARACTERISTICS
TA = 25°C Parameter Forward voltage Reverse current Symbol VF1 VF2 VF3 IR Conditions IF=100mA IF=700mA IF=1A VR=10V Min.