Kexin Electronics RB550V-30
Schottky Diodes
FEATURES
Low VF,Low IR High reliability DiodesABSOLUTE MAXIMUM RATINGS
Ta = 25 P ara me ter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Sy m bol R ati ng Unit VRM 30 V VR 30 V IO 1.0 A IF SM 3 A Tj 1 50 Ts tg -40 to +150 SOD323ELECTRICAL CHARACTERISTICS
Ta = 25 P aram ete r Forward voltage Reverse current Sy m bol IF= 70 0mA VF IF=1.0A IR VR=10V Testconditon s Marking Marking SJ Min Typ Max Unit 0.45 0.49 0.48 0.52 V 1 30 µA 1 SMD Type Diodes Typical Characteristics KB550V-30(RB550V-30) FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 1 Ta=75℃ Ta=125℃ 0.1 Ta=150℃ 0.01 Ta=25℃ Ta=-25℃ 100000 10000 1000 100 10 1 0.1 0.001 0 200 400 600 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 0.01 0 Ta=150℃ Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 100 f=1MHz 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS...