• Part: A43L0616B
  • Description: 512K x 16-Bit x 2 Banks Synchronous DRAM
  • Manufacturer: AMIC Technology
  • Size: 1.26 MB
Download A43L0616B Datasheet PDF
AMIC Technology
A43L0616B
A43L0616B is 512K x 16-Bit x 2 Banks Synchronous DRAM manufactured by AMIC Technology.
Features - JEDEC standard 3.3V power supply - LVTTL patible with multiplexed address - Dual banks / Pulse RAS - MRS cycle with address key programs - CAS Latency (2,3) - Burst Length (1,2,4,8 & full page) - Burst Type (Sequential & Interleave) - All inputs are sampled at the positive going edge of the system clock - Industrial operating temperature range: -40ºC to +85ºC for - U - Pb-Free type for -F - Burst Read Single-bit Write operation - DQM for masking - Auto & self refresh - 32ms refresh period (2K cycle) - Available in 50-pin TSOP(II) package - All Pb-free (Lead-free) products are Ro HS2.0 pliant General Description The A43L0616B is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 X 524,288 words by 16 bits, fabricated with AMIC’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Pin Configuration - TSOP (II) VSS DQ15 DQ14 VSSQ DQ13 DQ12 VDDQ DQ11 DQ10 VSSQ DQ9 DQ8 VDDQ NC/RFU UDQM CLK CKE NC A9 A8 A7 A6 A5 A4 VSS 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 A43L0616BV 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 VDD DQ0 DQ1 VSSQ DQ2 DQ3 VDDQ DQ4 DQ5 VSSQ DQ6 DQ7 VDDQ LDQM WE CAS RAS CS BA A10/AP A0 A1 A2 A3 VDD (November, 2019, Version 1.4) 1 AMIC Technology, Corp. Block Diagram Bank Select Data Input Register Sense AMP Row Buffer Refresh Counter Row Decoder 512K X 16 512K X 16 Address Register LCBR...