A64E06161 Datasheet | AMIC Technology

Features Operating voltage: VCC: 1.7V to 1.95V VCCQ: 1.7V to VCC Access times: t AA = 70ns (max.) Page Access times: t PAA = 25ns (max) Current: A64E06161 series: Operating Current (Icc1) : 15m A (max.) Standby Current (Isb1) : 100u A (max) Deep Power Down Standby Current (IZZ) : 10µA (max.) 4-word page length Support 4 distinct operation modes for reducing standby power : Deep Power Down (DPD) mode Reduce Memory Size (RMS) mode (4M, 8M, 12M) Partial Array Refresh (PAR) mode (4M,8M,12M) Temperature pensated Refresh (TCR) mode Industrial operating temperature range: -25°C to +85°C for - I Available in 48-ball Mini BGA (6X8) package. 1M X 16 Bit Low Voltage Super RAM General Description The A64E06161 is a low operating current 16,777,216-bit super RAM organized as 1,048,576 word by 16bit and operated on low power supply voltage from 1.7V to 1.95V. It is built using AMIC’s high performance CMOS DRAM process. Using hidden refresh technique, the A64E06161 provides a patible asynchronous interface and data can be read in 4-word page mode for fast access times. The A64E06161 has an internal register named the Configuration Register (CR) that controls the operation. The A64E06161 is designed for reducing current consumption during hidden self refresh and operating through following mode: Deep Power Down (DPD) mode, Reduce Memory Size (RMS) mode, Partial Array Refresh (PAR) mode and Temperature pensated refresh (TCR) mode. This A64E06161 is suited for low power application such as mobile phone and PDA or other battery-operated handheld device. Pin Configuration Mini BGA (6X8) Top View 1 A 2 3 4 5 6 LB I/O8 A0 A3 A1 A4 A2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC I/O10 I/O11 I/O12 I/O13 A19 A8 CE I/O1 I/O3 I/O4 I/O5 WE A11 C D E F G H I/O9 VSSQ VCCQ I/O14 I/O15 A18 A5 A17 NC A14 A12 A9 A6 A7 A16 A15 A13 A10 A64E06161G PRELIMINARY (November, 2004, Version 0.1) AMIC Technology, Corp. Block Diagram A0 16,777,216 MEMORY ARRAY DECODER VCCQ...