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AWT6275 - Linear Power Amplifier Module

General Description

The AWT6275 meets the increasing demands for higher output power in UMTS handsets.

The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250 chipset.

Key Features

  • InGaP HBT Technology High Efficiency: 43% @ POUT = +27.5 dBm 21% @ POUT = +16 dBm 15% @ POUT = +7 dBm.
  • Low Quiescent Current: 16 mA Low Leakage Current in Shutdown Mode:.

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Datasheet Details

Part number AWT6275
Manufacturer ANADIGICS
File Size 315.72 KB
Description Linear Power Amplifier Module
Datasheet download datasheet AWT6275 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com TM AWT6275 HELP IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.8 FEATURES • • InGaP HBT Technology High Efficiency: 43% @ POUT = +27.5 dBm 21% @ POUT = +16 dBm 15% @ POUT = +7 dBm • • • • • • • • • Low Quiescent Current: 16 mA Low Leakage Current in Shutdown Mode: <1 µA VREF = +2.85 V (+2.75 V min over temp) Optimized for a 50 Ω System Low Profile Miniature Surface Mount Package Option: 1.1 mm Max RoHS Compliant Package, 250 oC MSL-3 HSDPA Capable Dual Band WCDMA Wireless Handsets Dual Mode 3GPP Wireless Handsets bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 4 mm x 4 mm x 1.