AWT6276R Datasheet | ANADIGICS

FEATURES - - In Ga P HBT Technology High Efficiency: 45 % @ POUT = +29.5 d Bm 21 % @ POUT = +16 d Bm 16 % @ POUT = +7 d Bm - - - - - - - Low Quiescent Current: 15 m A Low Leakage Current in Shutdown Mode: <1 µA VREF = +2.85 V (+2.75 V min over temp) Optimized for a 50 Ω System Low Profile Miniature Surface Mount Package: 1.1 mm Max Ro HS pliant Package, 250 o C MSL-3 HSDPA pliant (no backoff) M20 Package 10 Pin 4 mm x 4 mm x 1.1 mm Surface Mount Module APPLICATIONS - - Dual Band WCDMA Wireless Handsets Dual Mode 3GPP Wireless Handsets PRODUCT DESCRIPTION The AWT6276 meets the increasing demands for higher output power in UMTS handsets. The PA module is optimized for VREF = +2.85 V, a requirement for patibility with the Qualm® 6275 chipset. The device is manufactured on an advanced In Ga P HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 4 mm x 4 mm x 1.1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system. GND at slug (pad) VCC RFIN GND 1 2 3 Bias Control 10 VCC 9 8 7 6 GND RFOUT GND GND VMODE 4 VREF 5 Figure 1: Block Diagram 12/2005 .. GND VCC RFIN GND VMODE VREF 1 2 3 4 5 GND 10 VCC 9 8 7 6 GND RFOUT GND GND Figure 2: Pinout (X-ray Top View) Table 1: Pin Description PIN 1 2 3 4 5 6 7 8 9 10 NAME V CC RFIN GND VMODE VREF GND GND RFOUT GND V CC DESCRIPTION Supply Voltage RF Input Ground Mode Control Voltage Reference Voltage Ground Ground RF Output Ground Supply Voltage PRELIMINARY DATA SHEET - Rev 1.4 12/2005 .. ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER Supply Voltage (VCC) Mode Control Voltage (VMODE) Reference Voltage (VREF) RF Input Power (PIN) Storage Temperature (TSTG) MIN 0 0...