ANADIGICS AWT6276R
Linear Power Amplifier Module
FEATURES
●● InGaP HBT Technology High Efficiency: 45 % @ POUT = +29.5 dBm 21 % @ POUT = +16 dBm 16 % @ POUT = +7 dBm
●
●
●
●
●
●
● Low Quiescent Current: 15 mA Low Leakage Current in Shutdown Mode: <1 µA VREF = +2.85 V (+2.75 V min over temp) Optimized for a 50 Ω System Low Profile Miniature Surface Mount Package: 1.1 mm Max RoHS Compliant Package, 250 oC MSL-3 HSDPA Compliant (no backoff) AWT6276R M20 Package 10 Pin 4 mm x 4 mm x 1.1 mm Surface Mount Module
APPLICATIONS
●● Dual Band WCDMA Wireless Handsets Dual Mode 3GPP Wireless Handsets PRODUCT
DESCRIPTION
The AWT6276 meets the increasing demands for higher output power in UMTS handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6275 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time.