Advanced Power Electronics AP28G40GEH
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
| Part No. | AP28G40GEH |
|---|---|
| Datasheet | AP28G40GEH Download |
| Manufacturer |  Advanced Power Electronics |
| Description | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
▼ RoHS Compliant & Halogen-Free AP28G40GEH/J Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR G CE TO-252(H) VCE ICP G 400V 150A C G C E TO-251(J)ABSOLUTE MAXIMUM RATINGS
@Tj=25oC(unless otherwise specified) Symbol Parameter Rating VCE Collector-Emitter Voltage 400 VGEP Peak Gate-Emitter Voltage ±6 ICP Pulsed Collector Current, VGE @ 2.5V 150 PD@TA=25℃ Maximum Power Dissipation 1.1 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range 150 . E Units V V A W oC oCELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. IGES Gate-Emitter Leakage Current VGE=+ 6V, VCE=0V -- ICES Collector-Emitter Leakage Current VCE=400V, VGE=0V -- VCE(sat) Collector-Emitter Saturation Voltage VGE=2.5V, ICP=150A (Pulsed) - 3.5 VGE(th) Gate Threshold Voltage VCE=VGE, IC=250uA 0.3 - Qg Total Gate Charge IC=40A - 76 Qge Gate-Emitter Charge VCE=200V -4 Qgc Gate-Collector Charge VGE=4V - 26 td(on) Turn-on...
