DESCRIPTION
APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost. G DS TO-220(P) ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data & specifications subject to change without notice Rating 400 ±20 5.5 3.5 22 74 0.59 152 5.5 -55 to 150 -55 to 150 Units V V A A A W W/℃ mJ A ℃ ℃ Max. Max. Value 1.7 62 Unit ℃/W ℃/W 200420071-1/4 IRF730 ELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) V...
Advanced Power Electronics
