APM AP10H03LI
The AP10H03LI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.| Part No. | AP10H03LI |
|---|---|
| Datasheet | AP10H03LI Download |
| Manufacturer |  APM |
| Description | 30V N+N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
AP10H03LI 30V N+N-Channel Enhancement Mode MOSFETGENERAL FEATURES
VDS = 30V ID =10A RDS(ON) < 24mΩ @ VGS=10V （Type：18mΩ） RDS(ON) < 28mΩ @ VGS=4.5V （Type：22mΩ） Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack AP10H03LI SOT23-6L Marking AP10H03LI XXX YYYYABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDM Continuous Drain Current Continuous Drain Current Pulsed Drain Current2 PD@TA=25℃ Total Power Dissipation3 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-ambient 1 RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) Rating 30 ±12 10 6.9 30 1 -55 to 150 -55 to 150 125 85 Qty(PCS) 3000 Units V V A A A W ℃ ℃ ℃/W ℃/W AP10H03LI RVE1.0 永源微電子科技有限公司 1 AP10H03LI 30V N+N-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min.
