AP10H03LI - 30V N+N-Channel Enhancement Mode MOSFET

APM

General Description

The AP10H03LI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

VDS = 30V ID =10A RDS(ON) < 24mΩ @ VGS=10V （Type：18mΩ） RDS(ON) < 28mΩ @ VGS=4.5V （Type：22mΩ）.

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AP10H03LI 30v n+n-channel enhancement mode mosfet by APM - Datasheet Preview

Datasheet Details

Part number	AP10H03LI
Manufacturer	APM
File Size	1.70 MB
Description	30V N+N-Channel Enhancement Mode MOSFET
Datasheet	AP10H03LI Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP10H03LI 30V N+N-Channel Enhancement Mode MOSFET The AP10H03LI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =10A RDS(ON) < 24mΩ @ VGS=10V （Type：18mΩ） RDS(ON) < 28mΩ @ VGS=4.