DESCRIPTION
GENERAL FEATURES
VDS = 100V ID =140A RDS(ON) < 5.5mΩ @ VGS=10V (Type：4.5mΩ) Application DC/DC Converter LED Backlighting Power Management Switches Package Marking and Ordering Information Product ID Pack AP140N10D TO-252-3L Marking AP140N10D XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Total Power Dissipation4 Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case Rating 100 ±20 140 85 417 245 42 167 -55 to 150 -55 to 150 0.88 62 Qty(PCS) 2500 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP140N10D REV1.0 永源微電子科技有限公司 1 AP140N10D 100V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TC=25℃unless otherwise noted) Symbol Parameter Test Conditions Min.
APM
