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AP140N10T - 100V N-Channel Enhancement Mode MOSFET

Download the AP140N10T datasheet PDF. This datasheet also covers the AP140N10F variant, as both devices belong to the same 100v n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The AP140N10P/T uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 100V ID =140A RDS(ON) < 5.5mΩ @ VGS=10V (Type:4.6mΩ).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP140N10F-APM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AP140N10T
Manufacturer APM
File Size 1.34 MB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP140N10T Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AP140N10FIPIT 100V N-Channel Enhancement Mode MOSFET Description The AP140N10P/T uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =140A RDS(ON) < 5.5mΩ @ VGS=10V (Type:4.