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AP140N10P Datasheet PDF

APM AP140N10P

The AP140N10P/T uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application.
Part No. AP140N10P
Datasheet AP140N10P Download
Manufacturer
APM
Description 100V N-Channel Enhancement Mode MOSFET
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AP140N10P datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS = 100V ID =140A RDS(ON) < 5.5mΩ @ VGS=10V (Type:4.6mΩ) Application DC/DC Converter LED Backlighting Power Management Switches Package Marking and Ordering Information Product ID Pack AP140N10F TO-220F-3L AP140N10P TO-220-3L AP140N10T TO-263-3L Marking AP140N10F XXX YYYY AP140N10P XXX YYYY AP140N10T XXX YYYY

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Rating 100 ±20 140 85 417 245 42 167 -55 to 150 -55 to 150 0.88 62 Qty(PCS) 1000 1000 800 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP140N10P/T REV1.1 永源微電子科技有限公司 1 AP140N10FIPIT 100V...
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