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AP150N06D Datasheet PDF

APM AP150N06D

The AP150N06D uses advanced APM-SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application.
Part No. AP150N06D
Datasheet AP150N06D Download
Manufacturer
APM
Description 65V N-Channel Enhancement Mode MOSFET
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AP150N06D datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS = 60V ID =150A RDS(ON) < 2.8mΩ @ VGS=10V (Type:2.1mΩ) Application Battery protection UPS Package Marking and Ordering Information Product ID Pack AP150N06D TO-252-3L Marking AP150N06D XXX YYYY

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM Continuous Drain Current1,6 Continuous Drain Current1,6 Pulsed Drain Current2 EAS Single Pulse Avalanche Energy3 IAS Avalanche Current PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA RθJC Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating 60 ±20 150 105 450 585 55 168 -55 to 150 -55 to 150 62.5 1.5 Qty(PCS) 2500 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP150N06D REV1.0 永源微電子科技有限公司 1 AP150N06D 65V N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TJ=25℃, unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Uni...
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