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AP150N06D - 65V N-Channel Enhancement Mode MOSFET

General Description

The AP150N06D uses advanced APM-SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 60V ID =150A RDS(ON) < 2.8mΩ @ VGS=10V （Type：2.1mΩ）.

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Datasheet Details

Part number AP150N06D
Manufacturer APM
File Size 819.75 KB
Description 65V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP150N06D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP150N06D 65V N-Channel Enhancement Mode MOSFET Description The AP150N06D uses advanced APM-SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =150A RDS(ON) < 2.8mΩ @ VGS=10V （Type：2.