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AP9N90F Datasheet PDF

APM AP9N90F

The AP9N90F/T/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
Part No. AP9N90F
Datasheet AP9N90F Download
Manufacturer
APM
Description 900V N-Channel Enhancement Mode MOSFET
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AP9N90F datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS = 900V ID =9A RDS(ON) < 1000mΩ @ VGS=10V (Type:920mΩ) Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking AP9N90F TO-220F-3L AP9N90F XXX YYYY AP9N90P TO-220-3L AP9N90P XXX YYYY AP9N90T TO-263-3L AP9N90T XXX YYYY

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM EAS IAR EAR dv/dt PD Tj ,Tstg Drain Current, VGS @ 10V Drain Current, VGS @ 10V Drain Current - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Operating and Storage Temperature Range RθJC Thermal Resistance, Junction-to-Case Value 900 ± 30 9 5.8 36 576 9 53 5 31.2 -55 to +150 4.0 RθJA Thermal Resistance, Junction-to-Ambient 48.0 Qty(PCS) 1000 1000 800 Units V V A A A mJ A mJ V/ns W oC °C/W °C/W AP9N90F/P/T RVE1.0 永源微電子科技有限公司 1 AP9N90...
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