AP9N90T - 900V N-Channel Enhancement Mode MOSFET

APM

Download the AP9N90T datasheet PDF. This datasheet also covers the AP9N90F variant, as both devices belong to the same 900v n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The AP9N90F/T/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

VDS = 900V ID =9A RDS(ON) < 1000mΩ @ VGS=10V （Type：920mΩ）.

📥 Download Datasheet

AP9N90T 900v n-channel enhancement mode mosfet by APM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (AP9N90F-APM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	AP9N90T
Manufacturer	APM
File Size	1.16 MB
Description	900V N-Channel Enhancement Mode MOSFET
Datasheet	AP9N90T Datasheet

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Other Datasheets by APM

Part Number	Description
AP9N90F	900V N-Channel Enhancement Mode MOSFET
AP9N90P	900V N-Channel Enhancement Mode MOSFET
AP9N50D	500V N-Channel Enhancement Mode MOSFET
AP90N03D	30V N-Channel Enhancement Mode MOSFET
AP90N03NF	30V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

AP9N90FIPIT 900V N-Channel Enhancement Mode MOSFET Description The AP9N90F/T/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.