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AP9N90P Datasheet 900v N-channel Enhancement Mode MOSFET

Manufacturer: APM

Overview: AP9N90FIPIT 900V N-Channel Enhancement Mode MOSFET.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The AP9N90F/T/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

General

Key Features

  • VDS = 900V ID =9A RDS(ON) < 1000mΩ @ VGS=10V (Type:920mΩ).

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