APG120N12P Datasheet | APM

Description APG120N12PIT 120V N-Channel Enhancement Mode MOSFET The APG120N12PIT uses advanced SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 120V ID =120A RDS(ON) < 6.8mΩ @ VGS=10V （Type：6.0mΩ） Application Mobile phone fast charging Brushless motor Home appliance control board Package Marking and Ordering Information Product ID Pack Marking TO-220-3L APG120N12P XXX YYYY APG120N12T TO-263-3L APG120N12T XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDSS Drain-to-Source Voltage ID@TA=25℃ ID@TA=100℃ IDMa1 Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current EASa2 Single pulse avalanche energy Single pulse avalanche current Gate-to-Source Voltage PD TJ，Tstg Power Dissipation Operating Junction and Storage Temperature Range TL RθJC Maximum Temperature for Soldering Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Value 120 120 60 320 240 40 ±20 125 -55 to 150 300 1.0...