DESCRIPTION
APG120N12PIT 120V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 120V ID =120A RDS(ON) < 6.8mΩ @ VGS=10V （Type：6.0mΩ） Application Mobile phone fast charging Brushless motor Home appliance control board Package Marking and Ordering Information Product ID Pack Marking APG120N12P TO-220-3L APG120N12P XXX YYYY APG120N12T TO-263-3L APG120N12T XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDSS Drain-to-Source Voltage ID@TA=25℃ ID@TA=100℃ IDMa1 Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current EASa2 Single pulse avalanche energy IAR Single pulse avalanche current VGS Gate-to-Source Voltage PD TJ，Tstg Power Dissipation Operating Junction and Storage Temperature Range TL RθJC Maximum Temperature for Soldering Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Value 120 120 60 320 240 40 ±20 125 -55 to 150 300 1.0 50 Qty(PCS) 1000 800 Units V A A A mJ A V W ℃ ℃ ℃/W ℃/W 1 APG120N12P/T R...
APM
