APG120N12P - 120V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Battery protection or in other Switching application.

Features

VDS = 120V ID =120A RDS(ON) < 6.8mΩ @ VGS=10V （Type：6.0mΩ）.

APM

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APG120N12P 120V N-Channel Enhancement Mode MOSFET by APM - Datasheet Preview — Datasheet preview – APG120N12P

Datasheet Details

Part number	APG120N12P
Manufacturer	APM
File Size	1.62 MB
Description	120V N-Channel Enhancement Mode MOSFET
Datasheet	APG120N12P Datasheet
Additional preview pages of the APG120N12P datasheet.

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Full PDF Text Transcription

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Description APG120N12PIT 120V N-Channel Enhancement Mode MOSFET The APG120N12PIT uses advanced SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 120V ID =120A RDS(ON) < 6.8mΩ @ VGS=10V （Type：6.

Published: Mar 4, 2025 |