APG120N12P - 120V N-Channel Enhancement Mode MOSFET

APM

General Description

to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Battery protection or in other Switching application.

Key Features

VDS = 120V ID =120A RDS(ON) < 6.8mΩ @ VGS=10V （Type：6.0mΩ）.

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APG120N12P 120v n-channel enhancement mode mosfet by APM - Datasheet Preview

Datasheet Details

Part number	APG120N12P
Manufacturer	APM
File Size	1.62 MB
Description	120V N-Channel Enhancement Mode MOSFET
Datasheet	APG120N12P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description APG120N12PIT 120V N-Channel Enhancement Mode MOSFET The APG120N12PIT uses advanced SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 120V ID =120A RDS(ON) < 6.8mΩ @ VGS=10V （Type：6.