APG130N10NF Datasheet | APM

Description 100V N-Channel Enhancement Mode MOSFET The APG120N10NF uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =120A RDS(ON) < 4.2mΩ @ VGS=10V (Type：3.2mΩ) Application Isolated DC Motor control Synchronous-rectification Package Marking and Ordering Information Product ID Pack PDFN5- 6-8L Marking APG130N10NF XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Drain-Source Voltage Gate-Source Voltage ID@TA=25℃ Continuous Drain Current1 ID@TA=70℃ IDM EAS IAS PD@TA=25℃ Continuous Drain Current1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 TSTG Storage Temperature Range Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 Rating 100 ±20 130 78 480 320 40 131.6 -55 to 150 -55 to 150 25 0.95 Qty(PCS) 5000 Units V V A A A m J A W ℃...