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APG130N10NF - 100V N-Channel Enhancement Mode MOSFET

General Description

The APG120N10NF uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 100V ID =120A RDS(ON) < 4.2mΩ @ VGS=10V (Type：3.2mΩ).

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Datasheet Details

Part number APG130N10NF
Manufacturer APM
File Size 1.16 MB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet APG130N10NF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description APG130N10NF 100V N-Channel Enhancement Mode MOSFET The APG120N10NF uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =120A RDS(ON) < 4.2mΩ @ VGS=10V (Type：3.