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APG120N12T - 120V N-Channel Enhancement Mode MOSFET

Download the APG120N12T datasheet PDF. This datasheet also covers the APG120N12P variant, as both devices belong to the same 120v n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Battery protection or in other Switching application.

Key Features

  • VDS = 120V ID =120A RDS(ON) < 6.8mΩ @ VGS=10V (Type:6.0mΩ).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (APG120N12P-APM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number APG120N12T
Manufacturer APM
File Size 1.62 MB
Description 120V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet APG120N12T Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Description APG120N12PIT 120V N-Channel Enhancement Mode MOSFET The APG120N12PIT uses advanced SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 120V ID =120A RDS(ON) < 6.8mΩ @ VGS=10V (Type:6.