MM8006 Datasheet Text
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MM8006
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The ASI MM8006 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications.
PACKAGE STYLE TO-72
MAXIMUM RATINGS
IC VCBO PDISS TJ TSTG 50 mA 15 V 600 mW @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C
1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE
CHARACTERISTICS
SYMBOL
BVCEO BVCBO ICBO BVEBO hFE VCE(SAT) VBE(SAT) ft Cob Cib NF Gpe Pout η
TC = 25 °C
NONE
TEST CONDITIONS
IC = 3.0 mA IC = 1.0 µA VCB = 15 V VCB = 15 V IE = 10 µA VCE = 1.0 V IC = 10 mA IC = 10 mA VCE = 10 V VCB = 0 V VCB = 10 V VEB = 0.5 V VCE = 6.0 V VCB = 12 V VCB = 15 V IC = 1.0 mA IC = 6.0 mA IC = 8.0 mA IC = 1.0 mA IB = 1.0 mA IB = 1.0 mA IC = 4.0 mA f = 100 MHz f = 140 KHz f = 140 KHz f = 140 KHz f = 60 MHz f = 200 MHz f = 500 MHz TA = 150 °C
MINIMUM TYPICAL MAXIMUM
10 15 0.01 1.0 3.0 25 0.4 1.0 1000 3.0 1.7 2.0 6.0 15 30 25
UNITS
V V µA V --V V MHz pF pF dB dB mW %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
- NORTH HOLLYWOOD, CA 91605
- (818) 982-1200
- FAX (818) 765-3004
Specifications are subject to change without notice.
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