Part MM8006
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
Category Transistor
Manufacturer ASI
Size 33.29 KB
ASI

MM8006 Overview

Description

The ASI MM8006 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. PACKAGE STYLE TO-72 IC VCBO PDISS TJ TSTG 50 mA 15 V 600 mW @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE CHARACTERISTICS SYMBOL BVCEO BVCBO ICBO BVEBO hFE VCE(SAT) VBE(SAT) ft Cob Cib NF Gpe Pout η TC = 25 °C NONE TEST CONDITIONS IC = 3.0 mA IC = 1.0 µA VCB = 15 V VCB = 15 V IE = 10 µA VCE = 1.0 V IC = 10 mA IC = 10 mA VCE = 10 V VCB = 0 V VCB = 10 V VEB = 0.5 V VCE = 6.0 V VCB = 12 V VCB = 15 V IC = 1.0 mA IC = 6.0 mA IC = 8.0 mA IC = 1.0 mA IB = 1.0 mA IB = 1.0 mA IC = 4.0 mA f = 100 MHz f = 140 KHz f = 140 KHz f = 140 KHz f = 60 MHz f = 200 MHz f = 500 MHz TA = 150 °C MINIMUM TYPICAL MAXIMUM 10 15 0.01 1.0 3.0 25 0.4 1.0 1000 3.0 1.7 2.0 6.0 15 30 25 UNITS V V µA V --V V MHz pF pF dB dB mW % A D V A N C E D S E M I C O N D U C T O R, I N C.