MM8001 - HIGH FREQUENCY TRANSISTOR

Motorola Semiconductor (now NXP Semiconductors)

Download the MM8001 datasheet PDF. This datasheet also covers the MM8000 variant, as both devices belong to the same high frequency transistor family and are provided as variant models within a single manufacturer datasheet.

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MM8001 high frequency transistor by Motorola Semiconductor (now NXP Semiconductors) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MM8000-Motorola.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MM8001
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	42.56 KB
Description	HIGH FREQUENCY TRANSISTOR
Datasheet	MM8001 Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
MM8000	HIGH FREQUENCY TRANSISTOR
MM8002	HIGH FREQUENCY TRANSISTOR
MM8009	HIGH FREQUENCY TRANSISTOR
MM869B	PNP SILICON ANNULAR TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MM8000 MM8001 MM8002 CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current @Total Device Dissipation Jq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO "c PD Tj. Tstg Value 30 40 3.5 0.4 3.5 20 - 65 to + 200 Unit Vdc Vdc Vdc Adc Watts mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage dC = 5.0 mAdc, Ib = 0) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, l£ = 0) Emitter-Base Breakdown Voltage (IE = 0.