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MM8000 MM8001 MM8002
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
@Total Device Dissipation Jq = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol VCEO VCBO VEBO
"c
PD
Tj. Tstg
Value 30 40 3.5 0.4 3.5 20
- 65 to + 200
Unit Vdc Vdc Vdc Adc Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage dC = 5.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage (IC = 0.1 mAdc, l£ = 0)
Emitter-Base Breakdown Voltage (IE = 0.
MM8000 Datasheet
