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AT28LV010 Datasheet 1-megabit (128k X 8) Low Voltage Paged Parallel Eeprom

Manufacturer: Atmel (now Microchip Technology)

General Description

The AT28LV010 is a high-performance 3-volt only Electrically Erasable and Programmable Read-Only Memory.

Its 1 megabit of memory is organized as 131,072 words by 8 bits.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 54 mW.

Key Features

  • Single 3.3V ± 10% Supply.
  • Fast Read Access Time.
  • 200 ns.
  • Automatic Page Write Operation.
  • Internal Address and Data Latches for 128 Bytes.
  • Internal Control Timer.
  • Fast Write Cycle Time.
  • Page Write Cycle Time.
  • 10 ms Maximum.
  • 1 to 128-Byte Page Write Operation.
  • Low Power Dissipation.
  • 15 mA Active Current.
  • 20 µA CMOS Standby Current.
  • Hardware and Software Data Protection.

More Datasheets from Atmel (now Microchip Technology)

Part Number Description
AT28LV256 256K 32K x 8 Low Voltage CMOS E2PROM
AT28LV64B 64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection
AT28BV16 16K 2K x 8 Battery-Voltage CMOS E2PROM
AT28BV256 256K (32K x 8) Battery-Voltage Parallel EEPROMs
AT28BV64 64K (8K x 8) Battery-Voltage Parallel EEPROMs
AT28BV64B 64K (8K x 8) Battery-Voltage Parallel EEPROM
AT28C010 1-Megabit (128K x 8) Paged Parallel Military EEPROM
AT28C040 4-Megabit (512K x 8) Paged Parallel EEPROM
AT28C16 16K 2K x 8 CMOS E2PROM
AT28C17 16K 2K x 8 CMOS E2PROM

AT28LV010 Distributor