Datasheet4U Logo Datasheet4U.com

AT28BV16 - 16K 2K x 8 Battery-Voltage CMOS E2PROM

General Description

The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use

Key Features

  • 2.7 to 3.6V Supply Full Read and Write Operation Low Power Dissipation 8 mA Active Current 50 µA CMOS Standby Current Read Access Time - 250 ns Byte Write - 3 ms Direct Microprocessor Control DATA Polling READ/BUSY Open Drain Output on TSOP High Reliability CMOS Technology Endurance: 100,000 Cycles Data Retention: 10 Years Low Voltage CMOS Compatible Inputs and Outputs JEDEC Approved Byte Wide Pinout Comm.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AT28C010 1-megabit (128K x 8) Paged Parallel EEPROM ATMEL
AT28C010 1-Megabit (128K x 8) Paged Parallel EEPROM Microchip
AT28C010-12DK Space 1-MBit (128K x 8) Paged Parallel EEPROM ATMEL
AT28C16-T 16K (2K x 8) PCMCIA Nonvolatile Attribute Memory ATMEL
AT28C64B 64-Kbit (8K x 8) Industrial Parallel EEPROM Microchip

Other Datasheets by Atmel (now Microchip Technology)

Part Number Description
AT28BV256 256K (32K x 8) Battery-Voltage Parallel EEPROMs
AT28BV64 64K (8K x 8) Battery-Voltage Parallel EEPROMs
AT28BV64B 64K (8K x 8) Battery-Voltage Parallel EEPROM
AT28C010 1-Megabit (128K x 8) Paged Parallel Military EEPROM
AT28C040 4-Megabit (512K x 8) Paged Parallel EEPROM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AT28BV16 Features • • • • • • • • • 2.7 to 3.6V Supply Full Read and Write Operation Low Power Dissipation 8 mA Active Current 50 µA CMOS Standby Current Read Access Time - 250 ns Byte Write - 3 ms Direct Microprocessor Control DATA Polling READ/BUSY Open Drain Output on TSOP High Reliability CMOS Technology Endurance: 100,000 Cycles Data Retention: 10 Years Low Voltage CMOS Compatible Inputs and Outputs JEDEC Approved Byte Wide Pinout Commercial and Industrial Temperature Ranges 16K (2K x 8) Battery-Voltage™ CMOS E2PROM Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits.