AT28BV16 Datasheet | Atmel

Features - - - - - - - - - 2.7 to 3.6V Supply Full Read and Write Operation Low Power Dissipation 8 m A Active Current 50 µA CMOS Standby Current Read Access Time - 250 ns Byte Write - 3 ms Direct Microprocessor Control DATA Polling READ/BUSY Open Drain Output on TSOP High Reliability CMOS Technology Endurance: 100,000 Cycles Data Retention: 10 Years Low Voltage CMOS patible Inputs and Outputs JEDEC Approved Byte Wide Pinout mercial and Industrial Temperature Ranges 16K (2K x 8) Battery-Voltage™ CMOS E2PROM Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features . The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV16 is accessed like a static RAM for the read or write cycles without the need of external ponents. During a byte write, the address and data are latched (continued) Pin Configurations Pin Name A0 - A10 CE OE WE I/O0 - I/O7 NC DC Function Addresses Chip Enable Output Enable Write Enable Data Inputs/Outputs No Connect Don’t Connect TSOP Top View PDIP, SOIC Top View PLCC Top View 0308A 2-119 Description (Continued) internally, freeing the microprocessor address and data bus for other operations. Following the initiation of a write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer. The end of a write cycle can be determined by DATA polling of I/O7. Once the end of a write cycle has been detected, a new access for a read or a write can begin. The CMOS technology offers fast access times of 250 ns at low power dissipation. When the chip is deselected the standby current is less than 50 µA. Atmel’s 28BV16 has additional features to ensure high quality and manufacturability. The device utilizes error correction internally for extended endurance and for improved data retention...