AT28BV64 - 64K (8K x 8) Battery-Voltage Parallel EEPROMs

Product Overview

ATMEL Corporation

Datasheet Details

Part number	AT28BV64
Manufacturer	ATMEL Corporation
File Size	176.30 KB
Description	64K (8K x 8) Battery-Voltage Parallel EEPROMs
Datasheet	AT28BV64 Datasheet
Additional preview pages of the AT28BV64 datasheet.

Product details

Description

The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read-only Memory specifically designed for battery powered applications.

Features

2.7V to 3.6V Supply.
Full Read and Write Operation.
Low Power Dissipation.
8 mA Active Current.
50 µA CMOS Standby Current.
Read Access Time.
300 ns.
Byte Write.
3 ms.
Direct Microprocessor Control.
DATA Polling.
READY/BUSY Open Drain Output.
High Reliability CMOS Technology.
Endurance: 100,000 Cycles.
Data Retention: 10 Years.
JEDEC Approved Byte-Wide.

📁 Similar Datasheet

AT28C010 - 1-megabit (128K x 8) Paged Parallel EEPROM (ATMEL)
AT28C010 - 1-Megabit (128K x 8) Paged Parallel EEPROM (Microchip)
AT28C010-12DK - Space 1-MBit (128K x 8) Paged Parallel EEPROM (ATMEL)
AT28C16-T - 16K (2K x 8) PCMCIA Nonvolatile Attribute Memory (ATMEL)
AT28C64B - 64-Kbit (8K x 8) Industrial Parallel EEPROM (Microchip)
AT28HC256 - High-Speed Paged Parallel EEPROM (Microchip)
AT20-0106 - Digital Attenuator/ 50 dB/ 6-Bit/ TTL Driver/ DC - 2 GHz (Tyco Electronics)
AT20-0107 - Digital Attenuator/ 31.5 dB/ 6-Bit/ TTL Driver/ DC - 2.0 GHz (Tyco Electronics)

Other Datasheets by ATMEL Corporation

AT28BV64B - 64K (8K x 8) Battery-Voltage Parallel EEPROM
AT28BV16 - 16K 2K x 8 Battery-Voltage CMOS E2PROM
AT28BV256 - 256K (32K x 8) Battery-Voltage Parallel EEPROMs
AT28C010 - 1-Megabit (128K x 8) Paged Parallel Military EEPROM
AT28C040 - 4-Megabit (512K x 8) Paged Parallel EEPROM
AT28C16 - 16K 2K x 8 CMOS E2PROM

Published: Mar 26, 2005 |