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AT28BV64B - 64K (8K x 8) Battery-Voltage Parallel EEPROM

General Description

The Atmel® AT28BV64B is a high-performance electrically erasable programmable read only-memory (EEPROM).

Its 64K of memory is organized as 8,192 words by 8 bits.

Key Features

  • Single 2.7V to 3.6V Supply.
  • Hardware and Software Data Protection.
  • Low Power Dissipation.
  • 15mA Active Current.
  • 20µA CMOS Standby Current.
  • Fast Read Access Time.
  • 200ns.
  • Automatic Page Write Operation.
  • Internal Address and Data Latches for 64 Bytes.
  • Internal Control Timer.
  • Fast Write Cycle Times.
  • Page Write Cycle Time: 10 ms Maximum.
  • 1 to 64 Byte Page Write Operation.
  • DATA.

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Other Datasheets by Atmel (now Microchip Technology)

Part Number Description
AT28BV64 64K (8K x 8) Battery-Voltage Parallel EEPROMs
AT28BV16 16K 2K x 8 Battery-Voltage CMOS E2PROM
AT28BV256 256K (32K x 8) Battery-Voltage Parallel EEPROMs
AT28C010 1-Megabit (128K x 8) Paged Parallel Military EEPROM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features • Single 2.7V to 3.6V Supply • Hardware and Software Data Protection • Low Power Dissipation – 15mA Active Current – 20µA CMOS Standby Current • Fast Read Access Time – 200ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes – Internal Control Timer • Fast Write Cycle Times – Page Write Cycle Time: 10 ms Maximum – 1 to 64 Byte Page Write Operation • DATA Polling for End of Write Detection • High-reliability CMOS Technology – Endurance: 100,000 Cycles – Data Retention: 10 Years • JEDEC Approved Byte-wide Pinout • Industrial Temperature Ranges • Green (Pb/Halide-free) Packaging Only 1. Description The Atmel® AT28BV64B is a high-performance electrically erasable programmable read only-memory (EEPROM).