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AT49BV010 - 1-Megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Download the AT49BV010 datasheet PDF. This datasheet also covers the AT49HBV010 variant, as both devices belong to the same 1-megabit (128k x 8) single 2.7-volt battery-voltage flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memories organized as 131,072 words of 8 bits each.

Features

  • Single Supply Voltage, Range 2.7V to 3.6V.
  • Single Supply for Read and Write.
  • Fast Read Access Time - 55 ns.
  • Internal Program Control and Timer.
  • 8K bytes Boot Block With Lockout.
  • Fast Erase Cycle Time - 10 seconds.
  • Byte By Byte Programming - 30 µs/Byte typical.
  • Hardware Data Protection.
  • DATA Polling For End Of Program Detection.
  • Low Power Dissipation.
  • 25 mA Active Current.
  • 50 µA CMOS Stand.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AT49HBV010-ATMELCorporation.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AT49BV010
Manufacturer Atmel (Microchip)
File Size 83.63 KB
Description 1-Megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
Datasheet download datasheet AT49BV010 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AT49(H)BV/(H)LV01 Features • Single Supply Voltage, Range 2.7V to 3.6V • Single Supply for Read and Write • Fast Read Access Time - 55 ns • Internal Program Control and Timer • 8K bytes Boot Block With Lockout • Fast Erase Cycle Time - 10 seconds • Byte By Byte Programming - 30 µs/Byte typical • Hardware Data Protection • DATA Polling For End Of Program Detection • Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memories organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 90 mW over the commercial temperature range.
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