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AT49BV2048A - 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage Flash Memory

Download the AT49BV2048A datasheet PDF (AT49LV2048A included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 2-megabit (256k x 8/128k x 16) single 2.7-volt battery-voltage flash memory.

Description

The AT49BV/LV2048A is a 3-volt, 2-megabit Flash memory organized as 262,144 words of 8 bits each or 128K words of 16 bits each.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 67 mW at 2.7V read.

Features

  • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV).
  • Fast Read Access Time.
  • 70 ns.
  • Internal Erase/Program Control.
  • Sector Architecture.
  • One 8K Word (16K Bytes) Boot Block with Programming Lockout.
  • Two 4K Word (8K Bytes) Parameter Blocks.
  • One 112K Word (224K Bytes) Main Memory Array Block.
  • Fast Sector Erase Time.
  • 10 Seconds.
  • Byte-by-byte or Word-by-word Programming.
  • 3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AT49LV2048A_ATMELCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by ATMEL
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  • AT49BV001 - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
  • AT49BV001A - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
  • AT49BV001AN - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
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  • AT49BV001AT - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
  • AT49BV001N - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
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Full PDF Text Transcription

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Features • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control • Sector Architecture – One 8K Word (16K Bytes) Boot Block with Programming Lockout – Two 4K Word (8K Bytes) Parameter Blocks – One 112K Word (224K Bytes) Main Memory Array Block • Fast Sector Erase Time – 10 Seconds • Byte-by-byte or Word-by-word Programming – 30 µs Typical • Hardware Data Protection • Data Polling for End of Program Detection • Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49BV/LV2048A is a 3-volt, 2-megabit Flash memory organized as 262,144 words of 8 bits each or 128K words of 16 bits each.
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