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AT49BV512 - 512K (64K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description

The AT49BV512 is a 3-volt only, 512K Flash memories organized as 65,536 words of 8 bits each.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range.

Features

  • Single Supply Voltage Range, 2.7V to 3.6V.
  • Single Supply for Read and Write.
  • Fast Read Access Time.
  • 70 ns.
  • Internal Program Control and Timer.
  • 8K Bytes Boot Block with Lockout.
  • Fast Erase Cycle Time.
  • 10 Seconds.
  • Byte-by-Byte Programming.
  • 30 µs/Byte Typical.
  • Hardware Data Protection.
  • DATA Polling for End of Program Detection.
  • Low Power Dissipation.
  • 25 mA Active Current.

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Other Datasheets by Atmel (Microchip)

Part Number Description
AT49BV001 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001A 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001AN 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001ANT 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001AT 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features • Single Supply Voltage Range, 2.7V to 3.6V • Single Supply for Read and Write • Fast Read Access Time – 70 ns • Internal Program Control and Timer • 8K Bytes Boot Block with Lockout • Fast Erase Cycle Time – 10 Seconds • Byte-by-Byte Programming – 30 µs/Byte Typical • Hardware Data Protection • DATA Polling for End of Program Detection • Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49BV512 is a 3-volt only, 512K Flash memories organized as 65,536 words of 8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range.
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