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Semiconductor
SBT5401F
PNP Silicon Transistor
Description
• General purpose amplifier • High voltage application
Features
• high collector breakdown voltage : VCBO = -160V, VCEO = -150V • Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) • Complementary pair with SBT5551F
Ordering Information
Type NO. SBT5401F Marking NFN Package Code SOT-23F
Outline Dimensions
unit :
mm
2.4±0.1 1.6±0.1
1
2.9±0.1 1.90 BSC
3
0.4±0.05
2
0.15±0.05
PIN Connections 1. Base 2. Emitter 3. Collector
KST-2096-000
0.9±0.1
0~0.