SBT5401F Description
General purpose amplifier High voltage application.
SBT5401F Key Features
- high collector breakdown voltage : VCBO = -160V, VCEO = -150V
- Low collector saturation voltage : VCE(sat)=-0.5V(MAX.)
- plementary pair with SBT5551F
| Part number | SBT5401F |
|---|---|
| Download | SBT5401F Datasheet (PDF) |
| File Size | 192.98 KB |
| Manufacturer | Kodenshi AUK Group |
| Description | PNP Silicon Transistor |
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| Part Number | Description |
|---|---|
| SBT5401 | PNP Silicon Transistor |
| SBT5551 | NPN Silicon Transistor |
| SBT5551F | NPN Silicon Transistor |
| SBT2222 | NPN Silicon Transistor |
| SBT2222A | NPN Silicon Transistor |
General purpose amplifier High voltage application.