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Semiconductor
SBT5551
NPN Silicon Transistor
Descriptions
• General purpose amplifier • High voltage application
Features
• high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with SBT5401
Ordering Information
Type NO. SBT5551 Marking FNF Package Code SOT-23
Outline Dimensions
unit :
mm
2.4±0.1 1.30±0.1
1
1.90 Typ.
3 2
0.4 Typ. 0.45~0.60
0.2 Min.
1.12 Max.
2.9±0.1
KST-2012-000
0.124
PIN Connections 1. Base 2. Emitter 3. Collector
0.38
0~0.1
-0.03 +0.