SBT5551 Description
Semiconductor SBT5551 NPN Silicon Transistor Descriptions General purpose amplifier High voltage application.
SBT5551 Key Features
- high collector breakdown voltage : VCBO = 180V, VCEO = 160V
- Low collector saturation voltage : VCE(sat)=0.5V(MAX.)
- plementary pair with SBT5401
- 0.03 +0.05