Click to expand full text
Semiconductor
SBT5551F
NPN Silicon Transistor
Descriptions
• General purpose amplifier • High voltage application
Features
• high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with SBT5401F
Ordering Information
Type NO. SBT5551F Marking FNF Package Code SOT-23F
Outline Dimensions
unit :
mm
2.4±0.1 1.6±0.1
1
2.9±0.1 1.90 BSC
3
0.4±0.05 0.9±0.1
2
0.15±0.05
PIN Connections 1. Base 2. Emitter 3. Collector
0~0.