Datasheet4U Logo Datasheet4U.com

SBT5551F Datasheet NPN Silicon Transistor

Manufacturer: AUK (Kodenshi AUK Group)

General Description

s • General purpose amplifier • High voltage application

Overview

Semiconductor SBT5551F NPN Silicon Transistor.

Key Features

  • high collector breakdown voltage : VCBO = 180V, VCEO = 160V.
  • Low collector saturation voltage : VCE(sat)=0.5V(MAX. ).
  • Complementary pair with SBT5401F Ordering Information Type NO. SBT5551F Marking FNF Package Code SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1 2.9±0.1 1.90 BSC 3 0.4±0.05 0.9±0.1 2 0.15±0.05 PIN Connections 1. Base 2. Emitter 3. Collector 0~0.1 KST-2097-000 1 SBT5551F Absolute maximum ratings Characteristic Collector-Base voltage C.