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THN4501 - SiGe NPN Transistor

Datasheet Summary

Description

Base Emitter Collector Available Package Product Package THN4501U SOT-323 THN4501Z SOT-343 THN4501E SOT-523 Unit : mm Dimension 2.0ⅹ1

Features

  • S o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 12.5 dB at f = 2 GHz, VCE = 3 V, IC = 30 mA MAG = 9.5 dB at f = 2 GHz, VCE = 1 V, IC = 7 mA o High Transition Frequency fT = 11 GHz at f = 2 GHz, VCE = 3 V, IC = 50 mA.
  • hFE Classification Marking AK1 AK2 hFE 125 to 300 80 to 160.
  • Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PT TSTG TJ Parameter Collector to Base Breakdown Voltage Collecto.

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Datasheet Details

Part number THN4501
Manufacturer AUK
File Size 253.48 KB
Description SiGe NPN Transistor
Datasheet download datasheet THN4501 Datasheet
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Full PDF Text Transcription

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Semiconductor □ Application LNA and wide band amplifier up to GHz range THN4501 Series SOT-523 SiGe NPN Transistor Unit in mm □ FEATURES o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 12.5 dB at f = 2 GHz, VCE = 3 V, IC = 30 mA MAG = 9.
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