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THN450Z - SiGe NPN Transistor

Datasheet Summary

Features

  • s - High gain bandwidth product fT = 16 GHz @ VCE = 2 V, IC = 50 mA fT = 18 GHz @ VCE = 3 V, IC = 70 mA - High power gain |S21|2 = 12 dB @ VCE = 2 V, IC = 50 mA, f = 1.8 GHz MAG = 14 dB @ VCE = 2 V, IC = 50 mA, f = 1.8 GHz - Low noise figure NF = 1.5 dB @ VCE = 2 V, IC = 7 mA, f = 1.8 GHz.
  • Absolute Maximum Ratings ( TA = 25 ℃ ) Param eter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipati.

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Datasheet Details

Part number THN450Z
Manufacturer AUK
File Size 174.75 KB
Description SiGe NPN Transistor
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Semiconductor THN450Z SiGe NPN Transistor □ Applications - Low noise amplifier, oscillator and buffer amplifier up to 3 GHz SOT-343 Unit in mm □ Features - High gain bandwidth product fT = 16 GHz @ VCE = 2 V, IC = 50 mA fT = 18 GHz @ VCE = 3 V, IC = 70 mA - High power gain |S21|2 = 12 dB @ VCE = 2 V, IC = 50 mA, f = 1.8 GHz MAG = 14 dB @ VCE = 2 V, IC = 50 mA, f = 1.8 GHz - Low noise figure NF = 1.5 dB @ VCE = 2 V, IC = 7 mA, f = 1.
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