2SA1980E
2SA1980E is PNP Silicon Transistor manufactured by Kodenshi AUK Group.
Description
- General small signal amplifier
Features
- Low collector saturation voltage : VCE(sat)=-0.3V(Max.)
- Low output capacitance : Cob=4p F(Typ.)
- plementary pair with 2SC5343E
Ordering Information
Type NO. 2SA1980E Marking A : h FE rank Package Code SOT-523
Outline Dimensions
1.5~1.7 0.7~0.9 unit : mm
1.00 BSC 1.5~1.7
0.2~0.3
0.15 Min. 0~0.1 0.6~0.8 0.1 Min.
PIN Connections 1. Base 2. Emitter 3. Collector
KST-4001-002
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
-50 -50 -5 -150 150 150 -55~150
Unit
V V V m A m W °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Noise figure
(Ta=25°C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO h FE- VCE(sat) f T Cob NF
Test Condition
IC=-100µA, IE=0 IC=-1m A, IB=0 IE=-10µA, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2m A IC=-100m A, IB=-10m A VCE=-10V, IC=-1m A VCB=-10V, IE=0, f=1MHz VCE=-6V, IC=-0.1m A f=1KHz, Rg=10KΩ
Min. Typ. Max.
-50 -50 -5 70 80 4 -0.1 -0.1 700 -0.3 7 10
Unit
V V V µA µA V MHz p F d...
