2SA1980M
2SA1980M is PNP Silicon Transistor manufactured by Kodenshi AUK Group.
Description
- General small signal amplifier
Features
- Low collector saturation voltage : VCE(sat)=-0.3V(Max.)
- Low output capacitance : Cob=4p F(Typ.)
- plementary pair with 2SC5343M
Ordering Information
Type NO. 2SA1980M
Marking 1980
Package Code TO-92M
Outline Dimensions
3.9~4.1 2.9~3.1 unit : mm
0.44 REF 0.52 REF
1.27 Typ. 2.44~2.64
13.6~14.4 0.7 Typ. 2.9~3.1 3.8 Min. 0.42 Typ.
PIN Connections 1. Emitter 2. Collector 3. Base
KST-I001-002
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
Ta=25°C
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
-50 -50 -5 -150 400 150 -55~150
Unit
V V V m A m W °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Noise figure
Ta=25°C
Symbol
BVCBO BVCEO BVEBO ICBO IEBO h FE- VCE(sat) f T Cob NF
Test Condition
IC=-100µA, IE=0 IC=-1m A, IB=0 IE=-10µA, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2m A IC=-100m A, IB=-10m A VCE=-10V, IC=-1m A VCB=-10V, IE=0, f=1MHz VCE=-6V, IC=-0.1m A f=1KHz, Rg=10KΩ
Min. Typ. Max.
-50 -50 -5 70 80 4 -0.1 -0.1 700 -0.3 7 10
Unit
V V V µA µA V MHz p F d B
- : h FE rank / O : 70~140, Y : 120~240, G : 200~400, L :...
