Download SBT5401F Datasheet PDF
Kodenshi AUK Group
SBT5401F
SBT5401F is PNP Silicon Transistor manufactured by Kodenshi AUK Group.
Description - General purpose amplifier - High voltage application Features - high collector breakdown voltage : VCBO = -160V, VCEO = -150V - Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) - plementary pair with SBT5551F Ordering Information Type NO. SBT5401F Marking NFN Package Code SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 2.9±0.1 1.90 BSC 0.4±0.05 0.15±0.05 PIN Connections 1. Base 2. Emitter 3. Collector KST-2096-000 0.9±0.1 0~0.1 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -160 -150 -5 -600 200 150 -55~150 Unit V V V m A m W °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Collector-Emitter saturation voltage Collector-Emitter saturation voltage Base-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE (1) h FE (2) h FE (3) VCE(sat)(1) VBE(sat)(1) f T Cob - Test Condition IC=-100µA, IE=0 IC=-1m A, IB=0 IE=-10µA, IC=0 VCB=-120V, IE=0 VEB=-3V, IC=0 VCE=-5V, IC=-1m A VCE=-5V, IC=-10m A VCE=-5V, IC=-50m A IC=-10m A, IB=-1m A IC=-50m A, IB=-5m A IC=-10m A, IB=-1m A IC=-50m A, IB=-5m A VCE=-10V, IC=-10m A VCB=-10V, IE=0, f=1MHz Min. Typ....