SBT5401F
SBT5401F is PNP Silicon Transistor manufactured by Kodenshi AUK Group.
Description
- General purpose amplifier
- High voltage application
Features
- high collector breakdown voltage : VCBO = -160V, VCEO = -150V
- Low collector saturation voltage : VCE(sat)=-0.5V(MAX.)
- plementary pair with SBT5551F
Ordering Information
Type NO. SBT5401F Marking NFN Package Code SOT-23F
Outline Dimensions unit : mm
2.4±0.1 1.6±0.1
2.9±0.1 1.90 BSC
0.4±0.05
0.15±0.05
PIN Connections 1. Base 2. Emitter 3. Collector
KST-2096-000
0.9±0.1
0~0.1
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
-160 -150 -5 -600 200 150 -55~150
Unit
V V V m A m W °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Collector-Emitter saturation voltage Collector-Emitter saturation voltage Base-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO h FE (1) h FE (2) h FE (3) VCE(sat)(1) VBE(sat)(1) f T Cob
- Test Condition
IC=-100µA, IE=0 IC=-1m A, IB=0 IE=-10µA, IC=0 VCB=-120V, IE=0 VEB=-3V, IC=0 VCE=-5V, IC=-1m A VCE=-5V, IC=-10m A VCE=-5V, IC=-50m A IC=-10m A, IB=-1m A IC=-50m A, IB=-5m A IC=-10m A, IB=-1m A IC=-50m A, IB=-5m A VCE=-10V, IC=-10m A VCB=-10V, IE=0, f=1MHz
Min. Typ....