Download SBT5551 Datasheet PDF
Kodenshi AUK Group
SBT5551
SBT5551 is NPN Silicon Transistor manufactured by Kodenshi AUK Group.
Features - high collector breakdown voltage : VCBO = 180V, VCEO = 160V - Low collector saturation voltage : VCE(sat)=0.5V(MAX.) - plementary pair with SBT5401 Ordering Information Type NO. SBT5551 Marking FNF Package Code SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 1.12 Max. 2.9±0.1 KST-2012-000 PIN Connections 1. Base 2. Emitter 3. Collector 0~0.1 -0.03 +0.05 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 180 160 6 600 200 150 -55~150 Unit V V V m A m W °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Collector-Emitter saturation voltage Collector-Emitter saturation voltage Base-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE (1) h FE (2) h FE (3) VCE(sat)(1) VBE(sat)(1) f T Cob - Test Condition IC=100µA, IE=0 IC=1m A, IB=0 IE=10µA, IC=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1m A VCE=5V, IC=10m A VCE=5V, IC=50m A IC=10m A, IB=1m A IC=50m A, IB=5m A IC=10m A, IB=1m A IC=50m A, IB=5m A VCE=10V, IC=10m A VCB=10V, IE=0, f=1MHz Min. Typ....