SBT5551
SBT5551 is NPN Silicon Transistor manufactured by Kodenshi AUK Group.
Features
- high collector breakdown voltage : VCBO = 180V, VCEO = 160V
- Low collector saturation voltage : VCE(sat)=0.5V(MAX.)
- plementary pair with SBT5401
Ordering Information
Type NO. SBT5551 Marking FNF Package Code SOT-23
Outline Dimensions unit : mm
2.4±0.1 1.30±0.1
1.90 Typ.
3 2
0.4 Typ. 0.45~0.60
0.2 Min.
1.12 Max.
2.9±0.1
KST-2012-000
PIN Connections 1. Base 2. Emitter 3. Collector
0~0.1
-0.03 +0.05
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
180 160 6 600 200 150 -55~150
Unit
V V V m A m W °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Collector-Emitter saturation voltage Collector-Emitter saturation voltage Base-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO h FE (1) h FE (2) h FE (3) VCE(sat)(1) VBE(sat)(1) f T Cob
- Test Condition
IC=100µA, IE=0 IC=1m A, IB=0 IE=10µA, IC=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1m A VCE=5V, IC=10m A VCE=5V, IC=50m A IC=10m A, IB=1m A IC=50m A, IB=5m A IC=10m A, IB=1m A IC=50m A, IB=5m A VCE=10V, IC=10m A VCB=10V, IE=0, f=1MHz
Min. Typ....