SBT5551F
SBT5551F is NPN Silicon Transistor manufactured by Kodenshi AUK Group.
Features
- high collector breakdown voltage : VCBO = 180V, VCEO = 160V
- Low collector saturation voltage : VCE(sat)=0.5V(MAX.)
- plementary pair with SBT5401F
Ordering Information
Type NO. SBT5551F Marking FNF Package Code SOT-23F
Outline Dimensions unit : mm
2.4±0.1 1.6±0.1
2.9±0.1 1.90 BSC
0.4±0.05 0.9±0.1
0.15±0.05
PIN Connections 1. Base 2. Emitter 3. Collector
0~0.1
KST-2097-000
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
180 160 6 600 200 150 -55~150
Unit
V V V m A m W °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Collector-Emitter saturation voltage Collector-Emitter saturation voltage Base-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO h FE (1) h FE (2) h FE (3) VCE(sat)(1) VBE(sat)(1) f T Cob
- Test Condition
IC=100µA, IE=0 IC=1m A, IB=0 IE=10µA, IC=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1m A VCE=5V, IC=10m A VCE=5V, IC=50m A IC=10m A, IB=1m A IC=50m A, IB=5m A IC=10m A, IB=1m A IC=50m A, IB=5m A VCE=10V, IC=10m A VCB=10V, IE=0, f=1MHz
Min. Typ. Max.
180 160 6 80 80 30 100 0.2 0.5 1 1 400 6 250 100 100
Unit
V V V n A n A V V V V MHz p F
VCE(sat)(2)-...