• Part: AMMC-6232
  • Description: 18 to 32 GHz GaAs High Linearity Low Noise Amplifier
  • Manufacturer: Avago Technologies
  • Size: 1.37 MB
Download AMMC-6232 Datasheet PDF
Avago Technologies
AMMC-6232
AMMC-6232 is 18 to 32 GHz GaAs High Linearity Low Noise Amplifier manufactured by Avago Technologies.
Description Avago Technologies AMMC-6232 is an easy-to-use broadband, high gain, high linearity Low Noise Amplifier that operates from 18 GHz to 32GHz. The wide band and unconditionally stable performance makes this MMIC ideal as a primary or sub-sequential low noise block or a transmitter or LO driver. The MMIC has 4 gain stages and requires a 4V, 135m A power supply for optimal performance. The two gate bias voltages can be bined for ease of use or separated for more control flexibility. DCblock capacitors are integrated at the input and output stages. Since this MMIC covers several bands, it can reduce part inventory and increase volume purchase options The MMIC is fabricated using PHEMT technology to provide exceptional low noise, gain and power performance. The backside of the chip is both RF and DC ground which helps simplify the assembly process and reduce assembly related performance variations and cost. Attention:Observe precautions for handling electrostaticsensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 1A) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control Features - 800μm x 2000μm Die Size - Unconditionally Stable Specifications (Vdd = 4.0V, Idd = 135m A) - RF Frequencies: 18 - 32 GHz - High Output IP3: 29d Bm - High Small-Signal Gain: 27d B - Typical Noise Figure: 2.8d B - Input, Output Match: -10d B Applications - Microwave Radio systems - Satellite VSAT, DBS Up/Down Link - LMDS & Pt-Pt mm W Long Haul - Broadband Wireless Access (including 802.16 and 802.20 Wi Max) - WLL and MMDS loops Note: 1. This MMIC uses depletion mode p HEMT devices. Absolute Maximum Ratings [1] Parameters / Conditions Drain to Ground Voltage Gate-Drain Voltage Drain Current Gate Bias Voltage Gate Bias Current RF CW Input Power Max Max channel temperature Storage temperature Maximum Assembly Temp Symbol Vdd Vgd Idd Vg Ig Pin Tch stg Tmax Unit Max -8 m A +0.8 m A 1 d Bm +150 -65...